III–V material integration, IBM Research Zurich
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Figure S1. Selective area growth and selectivity. a,b. Schematic... | Download Scientific Diagram
Selective Area Growth of GaN Nanowire: Partial Pressures and Temperature as the Key Growth Parameters | Crystal Growth & Design
Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire | Scientific Reports
Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy - Strömberg - 2021 - physica status solidi (a) - Wiley Online Library
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Selective-area growth of III-V nanowires and their applications | Journal of Materials Research | Cambridge Core
Vertical growth characterization of InAs nanowires grown by selective area growth on patterned InP(1 1 1)B substrate by a MOCVD method - ScienceDirect
XPS core-level spectra of GaP grown by MOCVD on Si (1 1 2). | Download Scientific Diagram
Growth-Etch Metal–Organic Chemical Vapor Deposition Approach of WS2 Atomic Layers | ACS Nano
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Selectivity maps for GaAs and InAs SAG. (a) Illustration of the III−V... | Download Scientific Diagram
A Route to Obtaining Low-Defect III–V Epilayers on Si(100) Utilizing MOCVD | Crystal Growth & Design
Schematic process flow for (a–d) silicon (100) substrate preparation... | Download Scientific Diagram
a) Top SEM view of GaAs/Ge pyramids grown by MOVPE on top of 8-μm-tall... | Download Scientific Diagram
Selective-area growth of single-crystal wurtzite GaN nanorods on SiOx/Si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing | Scientific Reports
Selective-area growth of III-V nanowires and their applications | Journal of Materials Research | Cambridge Core
III-nitride core–shell nanorod array on quartz substrates | Scientific Reports
Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy | Scientific Reports
Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy - Strömberg - 2021 - physica status solidi (a) - Wiley Online Library
Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD | SpringerLink
Wafer-scale and selective-area growth of high-quality hexagonal boron nitride on Ni(111) by metal-organic chemical vapor deposition | Scientific Reports
